| 摘要 |
PURPOSE:To obtain a polycrystalline silicon film provided with crystal particles of a high aspect ratio by a method wherein a silicon molecular beam and atomlike hydrogen are emitted onto a substrate in which crystal particles have been formed on the surface, an amorphous silicon film provided with pillar- shaped crystal particles at the inside is formed and the amorphous silicon film is heat-treated in a vacuum. CONSTITUTION:A silicon molecualr beam 13 and atomlike hydrogen 14 are emitted onto a substrate in which silicon crystal particles 12 have been formed on an amorphous silicon film 11 while they are being heated in a vacuum. Then, pillar-shaped crystal particles 16 are formed in an amorphous silicon layer 15. When an assembly having such a structure is heat-treated, atoms in most of amorphous silicon are moved to the direction of the pillar-shaped crystal particles, and a polycrystalline silicon film 17 having a recessed and protruding shape is formed. Thereby, it is possible to obtain the storage electrode of a capacitor whose capacitance is large. |
