| 摘要 |
PURPOSE:To provide a semiconductor integrated circuit device provided with a bypass capacitor wherein power supply noize reduction effect is large and the mounting area is small, and a manufacturing method which can easily manufacture the device. CONSTITUTION:The title semiconductor integrated circuit device has a bypass capacitor 2 which is formed on the upper part of a passivation film 3 formed on an IC chip main body 1 having a plurality of semiconductor chips and a multilayered wiring layer. The bypass capacitor 2 is formed in the manufacturing process of the semiconductor integrated circuit device. |
