Method of making self-aligned, lateral diffusion barrier in metal lines to eliminate electromigration

摘要

A method of providing interconnections to a semiconductor integrated chip designed to eliminate electromigration. The method includes the steps of forming an interconnection with segments of Al interspersed with segments of a refractory metal, wherein each aluminum segments is followed by a segment of refractory metal, aligning the aluminum and refractory metal segments with respect to each other ensuring electrical continuity.