发明名称 |
REMOVING METHOD OF ETCHING RESIDUE TO POLYSILICON FILM |
摘要 |
The method for eliminating etch remain objection in a patterning process of a polysilicon film formed on an insulating layer during manufacturing a semiconductor element, comprises the steps of oxidizing the etch remain objection of the polysilicon film and making the oxide to have an insulating feature.
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申请公布号 |
KR950014271(B1) |
申请公布日期 |
1995.11.24 |
申请号 |
KR19920012615 |
申请日期 |
1992.07.15 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRY CO., LTD. |
发明人 |
SON, GON |
分类号 |
H01L21/306;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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