| 摘要 |
A surface-emitting semiconductor device having an improved definition of polarization direction of a laser light emitted. The device contains a semiconductor substrate having a surface inclined to its (100)-plane, a first semiconductor cladding layer of a first electroconduction type formed directly or through a semiconductor layer on the surface of the substrate, a semiconductor active layer formed on the first semiconductor cladding layer, and a second semiconductor cladding layer of a second electroconduction type opposite in polarity to the first electroconduction type which is formed on the semiconductor active layer. The active layer is different in lattice constant from at least one of the first and second cladding layers. A laser beam is emitted in the direction approximately perpendicular to the surface of the substrate. Preferably, an optical waveguide formed by the active layer and first and second cladding layers has a rectangular cross-section parallel to the surface of the substrate.
|
