发明名称 |
Power transistor driver stage with optimally reduced turn-off delay |
摘要 |
A fast-discharge switch is controlled by a comparator sensing the voltage difference between the output node and the input node of a driving integrator stage that controls the slew-rate of a power switching output transistor. The fast-discharge switch turns off automatically when the output power transistor reaches (in the case of a MOS transistor) or exits (in the case of a bipolar transistor) saturation. The circuit of the invention accelerates the discharge thus reducing the turn-off delay and is insensitive of load conditions and does not affect the performance of the integrating (driver) stage that control the slew-rate.
|
申请公布号 |
US5469094(A) |
申请公布日期 |
1995.11.21 |
申请号 |
US19940251699 |
申请日期 |
1994.05.31 |
申请人 |
SGS-THOMSON MICROELECTRONICS, S.R.L. |
发明人 |
NESSI, MAURIZIO |
分类号 |
H02P6/08;H03K17/042;H03K17/16;(IPC1-7):H03B1/00 |
主分类号 |
H02P6/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|