发明名称 Power transistor driver stage with optimally reduced turn-off delay
摘要 A fast-discharge switch is controlled by a comparator sensing the voltage difference between the output node and the input node of a driving integrator stage that controls the slew-rate of a power switching output transistor. The fast-discharge switch turns off automatically when the output power transistor reaches (in the case of a MOS transistor) or exits (in the case of a bipolar transistor) saturation. The circuit of the invention accelerates the discharge thus reducing the turn-off delay and is insensitive of load conditions and does not affect the performance of the integrating (driver) stage that control the slew-rate.
申请公布号 US5469094(A) 申请公布日期 1995.11.21
申请号 US19940251699 申请日期 1994.05.31
申请人 SGS-THOMSON MICROELECTRONICS, S.R.L. 发明人 NESSI, MAURIZIO
分类号 H02P6/08;H03K17/042;H03K17/16;(IPC1-7):H03B1/00 主分类号 H02P6/08
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