| 摘要 |
PURPOSE:To provide a surface emission semiconductor laser having a strained quantum well active layer of low element resistance and excellent crystallizability. CONSTITUTION:A multilayer structure, in which an active layer 4 is pinched by an n-type semiconductor multilayer film reflecting mirror 2 whereon an n-type InGaP layer and an n-type GaAs layer are alternately formed and a p-type semiconductor multilayer film reflecting mirror 6, whereon a p-type InGaP layer and a p-type GaAs layer are alternately formed, is arranged on an n-type GaAs substrate 1, and an InGaAsP layer having an inhibit band width, which is an intermediate on of an InGaP forbidden band width and GaAs inhibit band width, is provided in the surface emission semiconductor laser. A dielectric multilayer film reflecting mirror may be used as one of the semiconductor multilayer reflecting mirrors. |
