| 摘要 |
The method for manufacturing vertical MOSFET comprises the steps of: limiting an active region and a field region over a substrate of a first conductivity type and forming a first impurity region at the active region by ion-implanting of a second conductivity type; sequentially depositing first and second insulating layers over the active region and forming a trench at the region where a gate and a second impurity are to be formed; growing a third insulating layer in the trench and depositing and etching back a first conductive layer to form a gate; ion-implanting the second conductivity type of ion at the bottom of the trench by using the gate as a mask to form a second impurity region; forming a fourth insulating layer at the side wall of the gate and depositing and making flat a second conductive layer connected to the second impurity region; removing the second insulating layer, depositing a third conductive layer at the front side to be connected to the gate and etching back to make flat; oxidizing the first, second and third layers of the active region and removing the third conductive layer at the upper side of the first impurity region; and depositing a fifth insulating layer for flatness, forming a contact at each region and forming gate and source/drain electrodes.
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