MAKING METHOD OF TFT FOR LCD

摘要

forming a polycrystal silicon film(20) on a substrate(10); defining and forming an active region(20,20a) connected to both sides of the polycrystal silicon film(20), of which an interlayer part is separated to form a line pattern, and by which multichannels are formed; forming a gate oxide film(30) on the active region(20) and the exposed substrate; forming two gate eletrodes(40) to which one end is connected, being parallel with together; forming source/drain region(21) by implanting an impurity in the active region; and forming a metal or transparent electrode(60) by depositing a metal or a transparent conducting film after depositing an oxide film(50). The method forms double gate and multichannel structure TFT, reduces leakage current, and improves hydrogenation effect.