| 摘要 |
Semiconductor nanowire structures having a variation in composition or cross sectional geometry are grown on a substrate. The nanowire structures are harvested from the growth substrate by encapsulating the nanowires in a flexible matrix material to form a tape 6 and separating the tape from the growth substrate. The tape is transferred to a device substrate 7 where the nanowires having alternating n-type and p-type regions 1a, 1b, 2a, 2b (eg npnp or pnpn) may be used for forming complementary transistors or multicolour LEDs for a display. |
