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发明名称
Halbleiter-Bauelement mit verbesserter Gate-Kapazität und dessen Herstellungsverfahren.
摘要
申请公布号
DE68924495(D1)
申请公布日期
1995.11.16
申请号
DE1989624495
申请日期
1989.04.25
申请人
NEC CORP., TOKIO/TOKYO, JP
发明人
KITAOKA, NOBUYASU, MINATO-KU TOKYO, JP
分类号
H01L21/3205;H01L21/822;H01L21/8244;H01L23/52;H01L27/04;H01L27/11;H01L29/49;H01L29/78;(IPC1-7):H01L29/41;H01L27/10;H01L51/00
主分类号
H01L21/3205
代理机构
代理人
主权项
地址
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