发明名称 LIGHT EMITTING DIODE AND MANUFACTURE THEREOF
摘要 PURPOSE:To make a surface electrode with no mark of a characteristic test probe flat and to shorten a light emitting diode in characteristic test time by a method wherein a dummy electrode which a characteristic test probe is brought into contact with is formed on the peripheral surface of a second conductivity-type layer apart from the surface electrode. CONSTITUTION:A wafer 1 is fixed to a base pad 14 through the intermediary of a conductive wax 15, and a conductive lead wire 17 provided to a tester 16 is brought into contact with the wax 15. A probe 18 of the tester 16 is brought, into contact with each dummy electrode 8 to carry out a characteristic test. As mentioned above, an electrical power is applied to the dummy electrode located nearly at the center of an electrically isolated region 12, so that a current flows equally through the region 12 and a characteristic test can be stably and surely carried out. In the region 12, as the probe 18 is brought into contact with the dummy electrode 8 in place of four surface electrodes 7 to execute a characteristic test, so that a characteristic test time can be shortened. The probe 18 is brought into contact with the dummy electrode 8, so that the surface electrodes 7 are flat and free from probe marks.
申请公布号 JPH07302930(A) 申请公布日期 1995.11.14
申请号 JP19940092290 申请日期 1994.04.28
申请人 SANYO ELECTRIC CO LTD;TOTTORI SANYO ELECTRIC CO LTD 发明人 OKUYAMA SHINJI;KAKIMOTO TAKANARI
分类号 H01L21/66;H01L33/30;H01L33/38;H01L33/40 主分类号 H01L21/66
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