| 摘要 |
PURPOSE:To obtain the quantum box structure in even shape by a method wherein a recession is formed in a crystalline layer wherein the aperture parts are made smaller as it becomes deeper while the quantum structure is to be formed at least on one of the intersecting lines of the bottom part of the recession and the sides. CONSTITUTION:A silicon oxide film 2 is formed on the (111)B surface of a zincblende type crystalline structured compound semiconductor layer and then patterned to form a round hole 3 so as to use this SiO2 film as an etching resistant mask. Next, a compound semiconductor layer 1 is etched from this round hole 3 using an etchant extremely decelerating the etching rate on this {111} A surface than that of any other surface so that a tetrahedral trench having four triangular surfaces and four vertexes may be formed. Finally, the laminated layer structure in a large and small band gaps is to be grown by using the tetrahedral trench, thereby enabling the individual structure such as a quantum box, a quantum fine wire and quantum well, etc., and the composite bodies thereof to be formed. |
