| 摘要 |
PURPOSE: To reduce the off-current of a load element and to increase the on- current, by forming a conductor such as a grounding line of memory cells or a power source like of a stable potential to face an offset region each other putting an insulating layer in between and to operate to the offset region as a gate or a shield plate. CONSTITUTION: A gate 23 is formed under a conductive layer which is comprised of a source 24, a drain 25 and a channel region 26 by putting at insulating layer 22 in between, and a PMOS thin film transistor is comprised. An offset region X having a proper length is formed at the side of the drain 25 in the channel region 26. A ground line 21 of SRAM cells is so formed as to face each other putting the insulating layer 22 in between. |
