发明名称 PRETREATMENT METHOD IN ELECTRODE FORMATION TO COMPOUND SEMICONDUCTOR
摘要 PURPOSE:To prevent the peeling-off of an electrode due to wire bonding by obtaining sufficient electric contact by lowering contact resistance by making easier the alloying by heat treatment between a compound semiconductor and an electrode. CONSTITUTION:While the top of a compound semiconductor 1 is covered with a patterned photosensitive organic film 3, the compound semiconductor 1 is immersed in a hydrofluolic aqueous solution, and electrical contact between the compound semiconductor 1 and an electrode 2 obtained by the vapor deposition of a metal thereafter is improved by removing the oxide formed on the surface of the compound semiconductor 1 and also the peeling-off of the electrode by the wire bonding is prevented.
申请公布号 JPH07302813(A) 申请公布日期 1995.11.14
申请号 JP19940111933 申请日期 1994.04.28
申请人 NISSHIN STEEL CO LTD 发明人 OMURO AKIO
分类号 H01L21/60 主分类号 H01L21/60
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