| 摘要 |
PURPOSE:To obtain a structure which is excellent in the controllability of the film thickness of a silicide layer formed finally, has a high barrier property and is excellent in a crystal wiring of an upper-layer wiring, and a manufacture thereof, in a wiring structure having a wiring layer constituted of an Al-series material or the like on a Ti-series laminated film on a ground semiconductor. CONSTITUTION:In a connecting structure of a wiring connecting a wiring layer of Al or the like with a semiconductor of Si or the like electrically, TiN(200) 15/Ti(110) 14/silicide 12 or Ti(002)/TiN(111)/Ti(002)/Ti(111)/silicide or Ti(002)/TiN (111)/TiN(200)/Ti(111)/silicide are laminated in this sequence from the wiring layer side. A crystal growth is controlled by changing sharply a sputtering power on the target side or a bias on the substrate surface side or by changing sharply the flow rate of Ar, in the process of film formation of each layer. |
