发明名称 |
Improvements in or relating to dynamic random access memory devices. |
摘要 |
<p>A dynamic random access memory device (10) includes three separate sections - an input/output section (12), a peripheral transistor section (14), and a memory array section (16), all formed on a p- type substrate layer (18). The dynamic random access memory device (10) can employ separate substrate bias voltages for each section. The input/output section (12) has a p- type region (22) that is isolated from the p- type substrate layer (18) by an n- type well region (20). The peripheral transistor section (14) has a p- type region (36) that can be isolated from the p- type substrate layer (18) by an optional n- type well region (40) for those devices which require a different substrate bias voltage between the peripheral transistor section (14) and the memory array section (16). <IMAGE></p> |
申请公布号 |
EP0681331(A2) |
申请公布日期 |
1995.11.08 |
申请号 |
EP19950302940 |
申请日期 |
1995.04.28 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
CHEN, IH-CHIN;TENG, CLARENCE W.;SHICHIJO HISASHI. |
分类号 |
H01L21/8238;H01L21/8226;H01L21/8242;H01L27/082;H01L27/092;H01L27/105;H01L27/108;(IPC1-7):H01L27/108;H01L27/02 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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