Superconducting field effect device with vertical channel formed of oxide superconductor material

摘要

A superconducting device has a stacked structure including a first superconducting layer, a first insulating layer, a second superconducting layer, a second insulating layer and a third superconducting layer stacked on a substrate in this given order. The stacked structure has an end surface portion extending from the first insulating layer to the second insulating layer. A fourth superconducting layer is formed to cover the end surface of the stacked structure. A third insulating layer separates the stacked structure end surface and the fourth superconducting layer. The fourth superconducting layer is electrically connected to the first and third superconducting layers but is isolated from the second superconducting layer by the third insulating layer. The first through fourth superconducting layers are formed of an oxide superconductor thin film. A silicon containing layer is formed adjacent to at least one of the first, third and fourth superconducting layers, but is not in direct contact with the other superconducting layers.