| 摘要 |
PURPOSE:To improve breakdown voltage of a pn-junction without deteriorating electric characteristics. CONSTITUTION:In a semiconductor device wherein on a semiconductor layer 1b of either p-type or n-type conductivity, a semiconductor region 2 having the other conductivity type different from the above type is provided, and a pn-junction 3 having a curvature part is formed, a low impurity region 1c of a conductive type having a impurity concentration lower than its vicinity is provided on the semiconductor layer 1b of the conductive type so that it covers from a surface of the semiconductor layer 1b along the pn-junction 3 to the curvature part of the pn-junction 3 over a predetermined range of an outer periphery of the pn-junction. |
