| 摘要 |
PURPOSE: To provide a coating which has improved electrical property by annealing an Si-O containing film, obtained by transforming H-resin in damp/dry ammonium, in oxygen containing atmosphere. CONSTITUTION: H-resin is heated at a temperature in the range of 75-400 deg.C, under an atmosphere containing both ammonium and steam. Next, the H-resin is heated at a temperature in the range of 74-400 deg.C, under the atmosphere containing substantially moisture-free ammonium, so as to get an Si-O containing ceramic film. The obtained Si-O containing ceramic film is heated at a temperature of at least 150 deg.C for enough time to anneal this film, under oxygen containing atmosphere. As a result of this, the dielectric loss can be improved. |
