| 摘要 |
PURPOSE:To enable polishing work of high precision, by forming the surface of a through hole in a thick film multilayered wiring board surface on which a thin film layer is formed, to be the same surface as the board material surface of the thick film multilayered wiring board, or to be in a protruding step- difference of very small amount. CONSTITUTION:In a polishing work, colloidal silica whose mean abrasive grain 11 diameter is 80nm or smaller is used. The polishing pressure is controlled to be a specific value, and a thick film multilayered board 10 is subjected to polishing work. The step-difference between a board material working surface 20 and the through hole working surface 21 which is generated in the polishing work is set in the range of -0.5<=alpha<=+0.5. The working surface 21 of a through hole 9 and the working surface 20 of the board material 10 are desirable to be worked in the respective mirror surfaces whose surface roughness is 0.05mupmRa or less. In the both-surface polishing work, a plurality of dummy members are used, and a single member to be ground is worked. Thereby working excess and working lack which are to be generated in the case of thick film multilayered board working are prevented. |
