| 摘要 |
PURPOSE:To prevent oxidation of silicon atom in resist and to carry out highly accurate patterning at high throughput by carrying out all the operations including carrying of a substrate from an exposure process to a development process in non-oxidizing atmosphere wherein oxidizing gas such as oxygen does not exist. CONSTITUTION:A development chamber 16 provided with a vacuum evacuation system is installed besides an exposure chamber 15. Both chambers are connected by gate valves 11, 12, 13, 14 or by the gate valves 11, 12, 13, 14 and a sub-chamber. A substrate after exposure is carried into the development chamber 16 without being brought into contact with air. Thereby, generation of silicon oxide is prevented. |
