发明名称 |
Process for the production of an indium-tin oxide target. |
摘要 |
A process for mfg. a part-reduced sputter target for cathodic sputtering on the basis of indium oxide-tin oxide powder mixts. by means of pressure supported sintering is novel in that the tin-contg. component is at least partly formed from SnO and together with the In2O3 is subjected to a mixing treatment before compressing. Also claimed is a process for mfg. a part-reduced sputter target for cathodic sputtering on the basis of indium oxide-tin oxide powder mixts. by means of pressure supported sintering is novel in that the tin-contg. component is completely formed from SnO and together with SnO2 and In2O3 is subjected to a mixing treatment before compressing. Also claimed is a part-reduced sputter target for mfg. transparent electrically-conducting layers comprising a target mfd. by one of the above methods. |
申请公布号 |
EP0678591(A1) |
申请公布日期 |
1995.10.25 |
申请号 |
EP19940118341 |
申请日期 |
1994.11.22 |
申请人 |
LEYBOLD MATERIALS GMBH |
发明人 |
SCHLOTT, MARTIN, DR.;DAUTH, WOLFGANG,;KUTZNER, MARTIN;GEHMAN, BRUCE, DR. |
分类号 |
C04B35/628;C04B35/00;C04B35/457;C23C14/08;C23C14/34;H01L21/203 |
主分类号 |
C04B35/628 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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