发明名称 Process for the production of an indium-tin oxide target.
摘要 A process for mfg. a part-reduced sputter target for cathodic sputtering on the basis of indium oxide-tin oxide powder mixts. by means of pressure supported sintering is novel in that the tin-contg. component is at least partly formed from SnO and together with the In2O3 is subjected to a mixing treatment before compressing. Also claimed is a process for mfg. a part-reduced sputter target for cathodic sputtering on the basis of indium oxide-tin oxide powder mixts. by means of pressure supported sintering is novel in that the tin-contg. component is completely formed from SnO and together with SnO2 and In2O3 is subjected to a mixing treatment before compressing. Also claimed is a part-reduced sputter target for mfg. transparent electrically-conducting layers comprising a target mfd. by one of the above methods.
申请公布号 EP0678591(A1) 申请公布日期 1995.10.25
申请号 EP19940118341 申请日期 1994.11.22
申请人 LEYBOLD MATERIALS GMBH 发明人 SCHLOTT, MARTIN, DR.;DAUTH, WOLFGANG,;KUTZNER, MARTIN;GEHMAN, BRUCE, DR.
分类号 C04B35/628;C04B35/00;C04B35/457;C23C14/08;C23C14/34;H01L21/203 主分类号 C04B35/628
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