Semiconductor device having increased current capacity

摘要

A general object of the present invention is to make a maximum controllable current large without exerting adverse effect on other characteristics. In a surface of an n- layer 2 formed on a p+ substrate 1, p diffusion regions 3a, 3b and 3c are formed separated by n+ diffusion regions 4a, 4b and an oxidation film 9. Above the p diffusion regions 3a and 3b, gate electrodes 5a and 5b are formed insulated from the surrounding by an oxidation film 6. An Al-Si electrode 7 is in contact with the p diffusion region 3a and the n+ diffusion region 4a while a metal electrode 8 is in contact with the p+ substrate 1. By virtue of interposition of the oxidation film 9, a thyristor consisting of the n+ diffusion region 4a , p diffusion region 3a, n- layer 2 and p+ substrate 1 is prevented from being actuated.