| 摘要 |
A method where WSix films are used to contact heavily doped, n+ regions in a silicon substrate. The doped regions are formed by ion implantation of an impurity such as arsenic (As). The deposited WSix film is annealed prior to the deposition of the aluminum interconnect. This anneal is carried out at typical dopant activation conditions. The procedure results in unexpectedly low resistance for small contact areas of less than 1.7 mu m2 when the WSix film has a thickness of between 1000 ANGSTROM and 2500 ANGSTROM .
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