| 摘要 |
PCT No. PCT/SE95/00438 Sec. 371 Date Oct. 22, 1996 Sec. 102(e) Date Oct. 22, 1996 PCT Filed Apr. 21, 1995 PCT Pub. No. WO95/29397 PCT Pub. Date Nov. 2, 1995The concentration of oxygen clusters in silicon is determined with a spectrometer, for the infrared interval, by obtaining the absorption coefficients for one or more of the wave numbers 728+/-1, 734+/-1, 975+/-1, 988+/-1, 1000+/-1, 1006+/-1 and 1012+/-1cm-1, using the standard method that is used to determine oxygen atoms in interstitial position and carbon atoms in substitutional position when the measurement is carried out at the wave number 1106 and 605 cm-1. The absorption measurements are taken at room temperature and are standardized with respect to the thickness of the sample. The measurements are multiplied with a known calibration constant, whereupon the respective absorption coefficient for the different measured wave numbers are a measure of the concentration of different configurations of the oxygen clusters./! |
