| 摘要 |
PURPOSE:To restrain permeation of moisture even if an underlying SOG film is present by depositing an oxide-nitride containing nitrogen element in a plasma oxide deposited using an organic silane. CONSTITUTION:A plasma oxide 3 is deposited between first wirings 1 using an organic silane. It is then coated with SOG 5 for the purpose of step coverage. The SOG 5 is applied by 0.5mum on a flat plane and heat treated at 400 deg.C for 30min to produce SiO2. It is then subjected to etch back 6 by RIE while keeping intact the level difference on the surface after coating. Subsequently, P-TEOS 7 is deposited by 0.4mum for the purpose of planarization. Since a gas containing TEOS and O2 is introduced simultaneously with a gas containing SiH4 and nitrogen element and excited by plasma to deposit a film, permeation of moisture can be prevented even if an SOG film for improving the step coverage is present. |
