| 摘要 |
<p>PURPOSE:To provide a highly reliable thin film transistor which can surely prevent shortcircuiting between a gate electrode and source/drain electrodes by improving dielectric strength of a gate insulation film. CONSTITUTION:In a thin film transistor wherein a gate electrode 12, a gate insulation film 13, semiconductor films 14, 15, a source electrode 16S and a drain electrode 16D are deposited on a substrate 11, the gate insulation film 13 is formed to a double layer structure of a lower layer part 13a and an upper layer part 13b and an intermediate film 18 consisting of a material which is different from that of the lower layer part 13a and the upper layer part 13b is provided between the lower layer part 13a and the upper layer part 13b.</p> |
