| 摘要 |
PURPOSE:To obtain a capacitor of high reliability by a method wherein a perovskite insulating film is formed on a substrate, a film containing element which serves as donor or acceptor is selectively formed on the substrate element contained in the film is selectively diffused into the insulating film, and both an insulating film and a conductive film are formed on it. CONSTITUTION:A strontium titanate SrTiO2, film 112 is formed on a P-type silicon substrate 101 through a sputtering method, and Nb atom contained in an NB film 111 is diffused into the first SrTiO2 film 112 by annealing to make it electrically conductive. In succession, a second SrTiO2 film 113 is formed on all the surface to serve as a capacitor insulating film, and a second TiN film 114 is formed on the film 113 and patterned as usual into a TiN film electrode (plate electrode). Nb atom contained in the Nb film 111 to serve as donor or acceptor is diffused into the SrTiO2 film 112 of perovskite structure to make it conductive. |
