THIN FILM TRANSISTOR FABRICATION PROCESS

摘要

vacuum-evaporating a first polysilicon on an insulating film and injecting impurity ion on the surface of the polysilicon to form a damage layer; selectively inclining the first polysilicon to form an inclined gate and source/drain electrodes; vacuum-evaporating a gate insulating film on the whole surface to form a contact hole on the source/drain electrodes; and vacuum-evaporating a second polysilicon on the whole surface and injecting impurity ion on the surface of the second polysilicon to form a source/drain impurity area.