| 摘要 |
<p>By implementing oxidation to obtain a native oxide of aluminum (581, 582) after a device has been metallized (505, 565), advantages can be obtained in device operation, reliability, and life. A method of making a semiconductor device is disclosed and includes the following steps: forming a structure comprising layers of III-V semiconductor material, at least one of the layers being an aluminum-bearing III-V semiconductor material (530, 550); applying metal electrodes (505, 565) to the structure to form a metallized semiconductor structure; and heating the metallized structure in a water-containing environment to convert a portion of the aluminum-bearing III-V semiconductor material to a native oxide of aluminum (581, 582).</p> |
