发明名称 |
HYBRID SEMICONDUCTOR COMPONENT |
摘要 |
Hybrid semiconductor components, particularly linear infrared sensors produced by hybridisation, are disclosed. A component of this kind includes a main substrate (30) incorporating active elements (31) that cannot be provided on a silicon substrate. The substrate may be made of AsGa, InP, HgCdTe or PbTe. A plurality of silicon chips (50-55) are mounted on the main substrate by means of hybridisation using indium balls. The chips comprise readout and multiplexing circuits and have a limited size (i.e. a few millimetres) so that differential thermal expansion stresses are limited, while the sensing bar itself may be made in a single piece with no end-to-end joint. Bars with an extended length (several centimetres) and high resolution (at least a thousand points) may thus be produced.
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申请公布号 |
WO9528006(A1) |
申请公布日期 |
1995.10.19 |
申请号 |
WO1995FR00448 |
申请日期 |
1995.04.07 |
申请人 |
THOMSON-CSF;DUBOZ, JEAN-YVES;ROSENCHER, EMMANUEL;BOIS, PHILIPPE |
发明人 |
DUBOZ, JEAN-YVES;ROSENCHER, EMMANUEL;BOIS, PHILIPPE |
分类号 |
H01L27/146;(IPC1-7):H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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