| 摘要 |
The invention provides new tantalum compounds of the formula: Ta(OR)5-nXn where n is 1, 2 or 3; each R is independently selected from a straight or branched chain alkyl group having between 1 and 4 carbon atoms, or SiMe3; and X is a bidentate ligand. These compounds may be used as precursors for metal organic chemical vapour deposition (MOCVD) of oxide layers in applications such as integrated circuit dielectrics, microwaves, optical coatings and catalysts. |
