发明名称 |
Semiconductor device high dielectric capacitor with narrow contact hole |
摘要 |
An object of the invention is to provide a semiconductor device which has a capacitor having good anti-leak characteristics and good breakdown voltage characteristics and is suitable to high integration. Source/drain regions (25) are formed at a surface of a silicon substrate (31). Interlayer insulating films (1) and (3) having contact holes (1a) and (3a), through which a surfaces of the source/drain region is partially exposed, is formed on the surface of silicon substrate (31). Contact holes (1a) and (3a) are filled with plug layer (9a). A capacitor (20) having a highly dielectric film (15) is formed such that it is electrically connected to source/drain region (25) through plug layer (9a). The interlayer insulating film is formed of a two-layer structure including a silicon oxide film (1) and a silicon nitride film (3). Silicon nitride film (3) and plug layer (9a) have the top surfaces flush with each other.
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申请公布号 |
US5459345(A) |
申请公布日期 |
1995.10.17 |
申请号 |
US19940264092 |
申请日期 |
1994.06.22 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
OKUDAIRA, TOMONORI;KASHIHARA, KEIICHIRO |
分类号 |
H01L27/04;H01L21/822;H01L21/8242;H01L21/8246;H01L27/105;(IPC1-7):H01L27/00 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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