| 发明名称 |
Semiconductor substrate with electrical contact in groove |
| 摘要 |
A semiconductor substrate comprises a foundation, a semiconductor monocrystalline film formed on the foundation, and a high-melting-point metal film or a high-melting-point metal alloy film disposed in at least part of a region between the semiconductor monocrystalline film and the foundation. The high-melting-point metal film disposed below the semiconductor monocrystalline film can be utilized as a conductor in a semiconductor device.
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| 申请公布号 |
US5459346(A) |
申请公布日期 |
1995.10.17 |
| 申请号 |
US19940341265 |
申请日期 |
1994.11.17 |
| 申请人 |
RICOH CO., LTD. |
发明人 |
ASAKAWA, TOSHIFUMI;KOSAKA, DAISUKE;NAKAYAMA, HARUO |
| 分类号 |
H01L21/20;H01L21/268;H01L21/74;H01L21/762;H01L21/822;(IPC1-7):H01L21/782;H01L27/12;H01L29/06 |
主分类号 |
H01L21/20 |
| 代理机构 |
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