| 摘要 |
PURPOSE:To improve the flateness on surface level of a semiconductor wafer by forming a polishing face with a groove, on one main surface of a rigid surface plate where the surface grading is in roughly specified numerical range, and forming a resin film on the surface of the polishing face. CONSTITUTION:A surface plate 1 for polishing is constituted of material being little in mechanical and thermal transformation and besides flat, for example, ceramic material such as high-purity quartz, etc. Grooves 2 crossing each other are made on one main surface (polishing face) 1a of this surface plate for polishing so that polishing liquid may cover all the semiconductor wafer. Moreover, to secure the sticking tendency with a resin film 3, the grading (roughness) of, at least, the polishing face 1a is in the range of about 10-100mum, and a resin film 3 consisting of polyurethane resin or fluoric resin is made on the surface of the polishing face 1a, which enables the chemical mechanical polishing of a semiconductor wafer W to improve the flatness on surface level. Hereby, the stoppage of the polishing by the hard stopper made of resin film is expected. |
