| 摘要 |
The method comprises a step of growing heterostructure, deposited sequentially with a buffer layer, n-type activation layer, and a surface layer, a step of depositing a silicon nitride layer on the epitaxially-grown layer and etching the silicon nitride layer, a step of injecting p-type impurities into the activation doping region and forming a diffusion layer by the first annealing, a step of forming a protective layer on the surface of wafer and forming p-type activation layer by the second annealing, and a step of forming an isolated region by etching the ohmic contact of the protective layer.
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