| 摘要 |
PURPOSE:To manufacture a short-wavelength semiconductor light emitting element by a cheap method of deposition by the use of a II-VI compound semiconductor. CONSTITUTION:An n-type ZnS film is vacuum-deposited on the surface of a p-type ZnTe single crystal board. After that, on the ZnS film deposited surface In is deposited and an n-type electrode is pattern-formed by photo-lithography. And a p-type electrode is formed by depositing Au on a ZnS film nondeposited surface of the ZnTe single crystal board. |
