发明名称 Substrate holder and reaction apparatus.
摘要 <p>The present invention relates to a reaction apparatus using reaction gas and heating a substrate so as to form a film such as an insulating film or perform etching, and has for its object to provide a reaction apparatus capable of educing power consumption for heating the substrate and changing a substrate temperature in a short period of time, and also preventing a decline of a throughput and reducing labor and cost for maintenance. The present apparatus is provided with a substrate holder 12 in which an electrode 22 for attracting electrostatically a substrate 20 and heating means 23 for heating the held substrate 20 are formed in a common base substance 21, in a processing portion 7 partitioned from the outside by means of a chamber 7a and processing the substrate 20 with processing gas. &lt;IMAGE&gt;</p>
申请公布号 EP0676793(A2) 申请公布日期 1995.10.11
申请号 EP19950302288 申请日期 1995.04.05
申请人 CANON SALES CO., INC.;ALCAN-TECH CO., INC.;SEMICONDUCTOR PROCESS LABORATORY CO., LTD. 发明人 MAEDA, KAZUO, C/O SEMICONDUCTOR PROCESS;OHIRA, KOUICHI, C/O SEMICONDUCTOR PROCESS;NISHIMOTO, YUHKO, C/O SEMICONDUCTOR PROCESS
分类号 C30B25/12;C23C16/458;C23C16/507;H01L21/00;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):H01L21/00;H01L21/68;C23C16/44 主分类号 C30B25/12
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