<p>The present invention relates to a reaction apparatus using reaction gas and heating a substrate so as to form a film such as an insulating film or perform etching, and has for its object to provide a reaction apparatus capable of educing power consumption for heating the substrate and changing a substrate temperature in a short period of time, and also preventing a decline of a throughput and reducing labor and cost for maintenance. The present apparatus is provided with a substrate holder 12 in which an electrode 22 for attracting electrostatically a substrate 20 and heating means 23 for heating the held substrate 20 are formed in a common base substance 21, in a processing portion 7 partitioned from the outside by means of a chamber 7a and processing the substrate 20 with processing gas. <IMAGE></p>
申请公布号
EP0676793(A2)
申请公布日期
1995.10.11
申请号
EP19950302288
申请日期
1995.04.05
申请人
CANON SALES CO., INC.;ALCAN-TECH CO., INC.;SEMICONDUCTOR PROCESS LABORATORY CO., LTD.