Insulated gate field effect transistor and method of fabricating.

摘要

An IGFET is fabricated by (a) providing semiconductor substrate of first conductivity type, (b) forming a gate structure with first and second sides, (c) forming an implant block over a first portion of the gate structure and adjacent substrate with an opening in the block in the area covering the substrate, (d) forming first dopant region of first conductivity type in the substrate aligned to the first side of the gate and extending vertically a first distance into the substrate and laterally a second distance to a first position below the gate, (e) removing the implant block and forming a second dopant region of second conductivity in the first dopant region aligned to the first side of the gate and extending vertically a third distance into the first dopant and laterally a fourth distance to a second position under the gate, (f) forming a third dopant region of second type in the first dopant extending vertically a fifth distance and being laterally spaced apart from the first side of the gate, (g) forming a fourth dopant region of second type in the substrate on the second side of the gate extending vertically a seventh distance into the substrate, (h) forming first electrode in contact with third dopant region; second electrode contacting the fourth dopant region; third electrode contacting the gate structure. Also claimed is a method with more than one gate structure and a method in which the dopant regions are halo regions.