Semiconductor radiation detection apparatus for discriminating radiation having differing energy levels

摘要

The invention provides a high sensitivity semiconductor radiation detection apparatus having pn junctions formed in opposite surfaces of at least one semiconductor wafer. A common electrode for the pn junctions is formed in the substrate region of the semiconductor wafers, and a variable reverse bias voltage is supplied to an electrode formed in contact with at least one of the pn junctions, to vary the thickness of the depletion region generated at said pn junction, and hence the sensitivity of said junction to incident radiation of varying energy levels. By adjusting the relative thickness of the respective depletion regions, different types of radiation may be distinguished.