| 摘要 |
There is disclosed a single point TAB technology of sequentially bonding a number of inner leads (26,27,28) to corresponding electrodes (11) arranged along each edge of a rectangular principal surface of a semiconductor chip (10), one lead (27) at a time. Of one array of inner leads (26,27,28) arranged along one edge of the principal surface of the semiconductor chip (10), an inner lead (26) located at a first corner of the one edge is firstly bonded to a corresponding electrode of the semiconductor chip (10), and thereafter, the inner leads are sequentially bonded to corresponding electrodes (11) of the semiconductor chip (10) in the order starting from an inner lead (28) located at a second corner of the same one edge and reaching an inner lead (27) located at a central portion of the same one edge, and then, the inner leads are sequentially bonded to corresponding electrodes of the semiconductor chip in the order starting from an inner lead (26) next to the inner lead located at the first corner of the same one edge and reaching an inner lead just before the inner lead (27) located at the central portion of the same one edge. <IMAGE> |
