Circuit device for measuring the threshold voltage distribution of non-volatile memory cells.

摘要

A circuit device (1) for measuring the threshold voltage distribution among electrically programmable, non-volatile memory cells, which device comprises a differential amplifier (3) having a first input connected to a first circuit leg including at least one memory cell (2) and a second input connected to a second or reference circuit leg (4), and circuit means effective to cause an unbalance in the values of the currents flowing in the reference leg. The device is connected between a first supply voltage (Vdd) reference and a second voltage reference (GND), and said circuit means comprise a generator of a varying current as a function of the supply voltage (Vdd) which is associated with the reference leg (4).