发明名称 Dual dynamic sense amplifiers for a memory array
摘要 A method and circuit for reading a memory array by utilizing dual dynamic sense amplifiers. A first and a second dynamic sense amplifier are connected to an input line and complementary input line. A latch and a clocking circuit are also connected to the two dynamic sense amplifiers. Initially, an equilibrating signal is input into both sense amplifiers. A first clocking signal and a first isolating signal are then input into the first dynamic sense amplifier. The first clocking signal enables the first sense amplifier to read the data on the input and complementary input lines, while the first isolating signal isolates the first sense amplifier from the input and complementary input lines. An output is then provided to the latch based upon the data read by the first sense amplifier. A second clocking signal and a second isolating signal are then input into the second sense amplifier to enable the second sense amplifier to read the data on the input and complementary input lines. The state of the latch may or may not change based upon the data read by the second sense amplifier.
申请公布号 US5455802(A) 申请公布日期 1995.10.03
申请号 US19920995581 申请日期 1992.12.22
申请人 SGS-THOMSON MICROELECTRONICS, INC. 发明人 MCCLURE, DAVID C.
分类号 G11C11/419;G11C7/06;G11C11/409;(IPC1-7):G11C11/34 主分类号 G11C11/419
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