| 摘要 |
PURPOSE:To prevent the Al contamination due to adsorption from treatment liquid for higher cleaning effect, by making present a specific complexing agent or its salt in either or both of surface treatment agent or rinsing ultrapure wafer during surface treatment. CONSTITUTION:The title method for surface treatment consists of a process wherein a semiconductor is cleaned using semiconductor surface treatment agent the principal components of which are inorganic or organic alkali, hydrogen peroxide and water; and a subsequent process wherein the semiconductor is rinsed using ultrapure water. Either or both of the surface treatment agent and the ultrapure water are provided with a complexing agent or its salt containing three or more -C(=0)-N(OH)- groups in its molecule. If the reaction of the complexing agent on metal ion is more rapid than that of OH groups on metal ion and further the complex compound produced from the reaction is stable and water-soluble, the complexing agent is capable of preventing the production of hydroxide of metal ion present together in alkaline solution during a complexing reaction. |
