发明名称 |
Method of growing single crystal of beta -barium borate |
摘要 |
In growing a single crystal of beta -BaB2O4 from a melt of BaB2O4 by the Czochralski method, crushed single crystal particles of either beta -BaB2O4 or alpha -BaB2O4 are used as the starting material of the melt. The primary advantage of using the crushed single crystal particles resides in that transformation of a polycrystal initially nucleated on a platinum rod, which is brought into contact with the melt in place of a seed crystal, to single crystal can be accomplished in a greatly shortened time. In consequnce, high quality single crystals are obtained at good yield.
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申请公布号 |
US5454345(A) |
申请公布日期 |
1995.10.03 |
申请号 |
US19930077767 |
申请日期 |
1993.06.18 |
申请人 |
NEC CORPORATION |
发明人 |
KOUTA, HIKARU;MANAKO, SHOKO |
分类号 |
C30B15/00;C30B29/22;(IPC1-7):C30B29/10 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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