| 摘要 |
<p>PURPOSE: To make it easy to measure the extents of development at mutually different positions of a wafer by equipping the photomask, used for the manufacture of a semiconductor element, with the pattern for development extent measurement. CONSTITUTION: A specific area in the center of the photomask is divided equally into two; and many positive dot patterns are formed of the same material as the photomask forming material in one area, and many negative dot patterns are formed in the other area so that the dot patterns are made different in size gradually from the top to the bottom and from the left to the right while made correspond in pairs between both the areas. The pattern for development extent measurement having those patterns is used to make it easy and fast to inspect the uniformity of development of developing units, and when the development extents of developing units need to be adjusted, the adjustments are made easy.</p> |
