MOS capacitor assembly.

摘要

The capacitor comprises a semiconductor substrate (27) presenting on its surface an area (21) covered with an isolating film (27) which presents at least one opening (28a) corresponding to the interior of the area (21). A conducting layer (22) is formed on the insulating film (28) with an opening (22a) formed in the position corresponding to the opening in the insulating film (28). A primary electrode (23) is electrically connected to the conducting layer (22) and a secondary electrode (25) passes through the opening in the conducting layer (22) and through the opening in the insulating film (28) to make electrical connection with the substrate (27). A number of openings in the conducting layer (22) and insulating film (28) allow multiple connections to the substrate.