Semiconductor devices and their method of manufacture.

摘要

Structure For forming a ferroelectric film consisting of lead zirconate titanate using the sol gel method, a method to form a ferroelectric film containing respectively: a process (a) for obtaining fatty acid lead [compound]; a process (b) for obtaining titanium.alkoxide; a process (c) for obtaining zirconium.alkoxide having the same alcohol residues as the said titanium.alkoxide; and a process (d) for forming lead titanium.double alkoxide and lead zirconium.double alkoxide by mixing the aforementioned fatty acid lead, the aforementioned titanium.alkoxide, and the aforementioned zirconium.alkoxide. Results Hydrolysis and the condensation reaction of each of the double alkoxides advance uniformly, the thin PZT film formed has sufficient electrical characteristics such as the display of a smooth surface, a large remanence, and a small leakage of current, for example, and satisfies the demanded performance.