| 摘要 |
PURPOSE:To obtain a semiconductor light-emitting element which realizes a good heterojunction structure and whose high brightness is achieved by a method wherein a compound semiconductor material which is lattice-matched with a GaN-based material and whose band gap is narrower than that of GaN is used for a light-emitting layer. CONSTITUTION:In a semiconductor element which uses a group III-V material such as a GaN-based material or the like, a compound semiconductor which is composed of group II atoms A, group IV atoms B, group III atoms C and nitrogen atoms N and which is expressed by a composition formula of AxBxCyN2x+y (where o<x <=1 and 0<=y<1) is used for a light-emitting layer 13. That is to say, a part or the whole of the group III atoms for a III-V compound semiconductor is replaced by the group II atoms and the group IV atoms. Thereby, a double heterojunction structure which is lattice-matched with the GaN-based material and which is good can be relaized, and a light-emitting element in a visible region can be relaized. In addition, since a light-emitting operation between bands by the double heterojunction structure is utilized and the double heterojunction structure is of good quality, the high brightness of the semiconductor light-emitting element can be achieved. |
